impurity scattering
英 [ɪmˈpjʊərəti ˈskætərɪŋ]
美 [ɪmˈpjʊrəti ˈskætərɪŋ]
网络 杂质散射
双语例句
- With increasing doping concentration, the impact of neutral impurity scattering becomes more significant.
随着掺杂浓度的增加，中性杂质散射作用增强。 - In a strong magnetic field, the single impurity scattering is a good approximation.
理论计算结果表明电荷杂质散射引起朗道能级对称展宽； - The results show that at lower doping concentration, neutral impurity scattering has little influence on the electron mobility perpendicular to the principal c axis.
研究表明，低场下，掺杂浓度较低时，氮杂质不完全电离导致的中性杂质散射对4H-SiC横向电子迁移率影响较小。 - Resistance curves show that there is a small jump of 1% in resistance caused by the localized impurity superconduction phase transition around 7K. The scattering between electron_phonon is the main scattering mechanism.
输运性质的测量表明在7.2K时电阻因局域杂质超导相变而发生突变，电子和声子之间的散射是主要的散射机理。 - The influence of intervalley impurity scattering on the conductivities of the disordered layer system
等能谷间杂质散射对无序层状系统电导率的影响 - We found that thermal diffusion of A1, coated on glass substrate, into the films considerably increases charge carrier concentration, which, in turn, cancels out the decrease of mobility induced by impurity scattering and reduces sheet resistance of the films.
A1的热扩散共掺杂使载流子浓度提高，且其浓度的提高可以抵消杂质散射引起的迁移率下降，降低薄膜的方块电阻。 - The carrier mobility of practical transparent conductive oxide ( TCO) thin film is mainly dominated by ionized impurity scattering.
在实用的透明导电氧化物（TCO）薄膜中，载流子迁移率主要是受电子与掺杂离子之间散射的限制。 - In our simulation model, the scattering mechanisms include acoustic phonon scattering, polar optical phonon scattering, and ionized impurity scattering and so on.
模拟中包含的散射机理主要有声学声子散射、极性光学声子散射、电离杂质散射等。 - Study on the single impurity scattering to the one dimensional spin 1/ 2 electrons
一维自旋1/2电子系统的单杂质散射研究 - However the contribution of neutral impurity scattering to the total mobility is becoming smaller with increasing temperature at higher doping concentration.
掺杂浓度较高时，随着温度的增加，中性杂质散射的影响逐步减弱。 - The acoustic phonon deformation potential scattering, polar optical phonon scattering, intervalley phonon deformation scattering, ionized impurity scattering and neutral impurity scattering are considered.
在模拟中考虑了对其输运过程有着重要影响的声学声子形变势散射、极化光学声子散射、谷间声子散射、电离杂质散射以及中性杂质散射。 - The two-dimensional electron gas with high density formed at AlGaN/ GaN heterostructure screens the impurity scattering and increases the electron mobility.
AlGaN/GaN异质结产生高密度的二维电子气，屏蔽了杂质和缺陷的散射，改善了低场输运性能。 - Effect of intersubband impurity scattering in two dimensional disordered electron systems
二维无序电子系统子带间的杂质散射效应 - The influence of the impurity scattering on the properties of two-band superconductors
杂质对两能带超导体性质的影响 - On the resonance line width of ferrimagnetics caused by impurity scattering
杂质散射引起的亚铁磁体的共振线宽 - Low temperatures carrier mobility model, considering dependence on temperature, impurity and electrical field and combining the bulk and surface effects, is presented on the basis of analysis of all major scattering mechanisms.
在分析各种主要散射物理机制的基础上，建立起依赖温度、浓度和电场作用的载流子迁移率模型，并将体效应与表面效应有机地结合在一起。 - In TCO films deposited on high temperature substrates, the ionized impurity scattering and the neutral complex scattering are dominant.
对于较高温度下制备的TCO薄膜，对载流子迁移率起主要作用的散射机制是带电离子散射和电中性复合粒子散射。 - Our results are as follows: ( 1) The Feymann rules are obtained for the effects of nonmagnetic impurity scattering in theDDW state.
得到的主要结果有两个：（1）在研究非磁性杂质散射效应时，建立了关于非磁性杂质散射的费曼图规则。 - The results show that at lower temperatures, with increasing doping concentration, the impact of neutral impurity scattering becomes more significant.
结果表明：低温区，掺杂浓度较高时，中性杂质散射对电子霍耳迁移率影响很大； - The results show that the resistivity of Cu-Fe alloys are contributed mainly by the Fe impurity scattering and the scattering associated with strain fields of Fe precipitates.
结果表明：影响合金导电性的主要因素是溶质散射电阻、析出应变场散射电阻； - At low temperature the neutral impurity scattering plays the dominant role, which leads to the steady varying tendency of the conductance.
低温下由于中性杂质散射占主导低位，电导值基本不随温度改变。 - The ionized impurity scattering was the main scattering mechanism at low temperature, while the lattice vibration scattering became dominant at high temperature in SnO2: Sb films.
SnO2：Sb薄膜均为简并半导体，低温下以电离杂质散射为主，高温下以晶格振动散射为主。